10-FZ12NMA080NS03-M260F38 Datasheet, PDF (7/27 Pages) Vincotech – Mixed voltage component topology

Figure 9
Typical switching times as a
function of collector current
t = f(I _C)
1,00
t_doff
0,10
t_don
t_f
0,01
t_r
10-FZ12NMA080NS03-M260F38
10-PZ12NMA080NS03-M260F38Y
target datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R _G)
1,00
IGBT
t_don
t_doff
0,10
t_r
t_f
0,01
0,00
0
20
40
60
With an inductive load at
T_j =
125
°C
V _CE =
350
V
V _GE =
±15
V
R _gon =
4
Ω
R _goff =
4
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t _rr = f(I _c)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0
20
40
60
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
350
V
±15
V
4
Ω
80 I C (A) 100
0,00
0
5
10
With an inductive load at
T_j =
125
°C
V _CE =
350
V
V _GE =
±15
V
I_C =
56
A
15
R G ( Ω)
20
FWD
t_{rr High T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t _rr = f(R _gon)
0,12
0,09
t_{rr Low T}
0,06
0,03
FWD
t_{rr High T}
t_{rr Low T}
80 _{I C (A)}
100
0,00
0
5
10
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
350
V
56
A
±15
V
15
R gon ( Ω) ²⁰
copyright Vincotech
7
17 Sep. 2015 / Revision 2