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10-FZ12NMA080NS03-M260F38 Datasheet, PDF (4/27 Pages) Vincotech – Mixed voltage component topology
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Parameter
Neutral Point IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Half Bridge FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
10-FZ12NMA080NS03-M260F38
10-PZ12NMA080NS03-M260F38Y
target datasheet
Characteristic Values
Symbol
Conditions
V GE [V]
or
V GS [V]
V r [V]
or
V CE [V]
or
V DS [V]
I C [A]
or
I F [A]
or
I D [A]
T j [°C]
Value
Unit
Min Typ Max
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
tr
t d(off)
tf
E on
E off
C ies
C oss
C rss
QG
R th(j-s)
V CE=V GE
15
0
20
R goff=4 Ω
R gon=4 Ω
±15
f=1MHz
0
Thermal grease
thickness≤50um
λ = 1 W/mK
±15
600
0
350
25
480
0,0012
25
125
75
25
125
25
125
25
125
25
125
25
125
25
56
125
25
125
25
125
25
125
25
75
25
5
1,05
5,8
1,45
1,59
none
84
85
11
12
177
205
87
105
0,53
0,75
1,86
2,50
4620
288
137
470
1,32
6,5
V
1,85
V
15
mA
600
nA
Ω
ns
mWs
pF
nC
K/W
VF
Ir
I RRM
t rr
Q rr
( di rf/dt )max
E rec
50
25
125
1200
25
125
25
125
25
125
±15
350
56
25
125
25
125
25
125
R th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
R
Δ R/R
P
R 100=1486Ω
B (25/50)
B (25/100)
Tol. ±3%
Tol. ±3%
25
100
25
25
25
25
1,35
1,73
1,70
106
118
102
148
5,32
8,22
6904
4951
1,55
2,42
1,21
2,05
10
V
µA
A
ns
µC
A/µs
mWs
K/W
22000
-12
200
2
3950
3996
Ω
12
%
mW
mW/K
K
K
B
copyright Vincotech
4
17 Sep. 2015 / Revision 2
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