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| 10-FZ122PA100FC01-P999F58 Datasheet, PDF (8/15 Pages) Vincotech – AlN substrate for improved performance | |||
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Output Inverter
10-FZ122PA100FC01-P999F58
10-F0122PA100FC01-P999F59
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
6000
dI0/dt
5000
dIrec/dt
4000
3000
dIo/dtLow T
2000
1000
0
0
40
80
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
600
V
±15
V
4
â¦
Output inverter FRED
di0/dtHigh T
dIrec/dtLow T
dIrec/dtHigh T
120
160 I C (A) 200
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
7000
Tj = 25°C
6000
Output inverter FRED
dI0/dt
dIrec/dt
5000
4000
3000
2000
1000 Tj = Tjmax - 25°C
0
0
4
8
At
Tj =
VR =
IF =
VGE =
25/125 °C
600
V
100
A
±15
V
dIrec/dtHigh T
12
16 R gon ( Ω ) 20
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter IGBT
Figure 20
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0.26
K/W
IGBT thermal model values
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0.59
K/W
FRED thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1011
R (C/W)
0.01
0.06
0.10
0.07
0.02
0.00
Tau (s)
9.5E+00
1.4E+00
2.2E-01
5.9E-02
2.6E-03
4.6E-04
R (C/W)
0.02
0.08
0.22
0.18
0.05
0.04
Tau (s)
9.9E+00
1.2E+00
1.4E-01
3.8E-02
3.4E-03
4.7E-04
Copyright by Vincotech
8
Revision: 1
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