10-FZ122PA100FC01-P999F58 Datasheet, PDF (7/15 Pages) Vincotech – AlN substrate for improved performance

Output Inverter
10-FZ122PA100FC01-P999F58
10-F0122PA100FC01-P999F59
preliminary datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
30
Output inverter FRED
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
30
Output inverter FRED
25
Q_rr
25
20
T_j = T_jmax -25°C
15
20
T_j = T_jmax -25°C
Q_rr
15
Q_rr
10
T_j = 25°C
5
T_j = 25°C
10
Q_rr
5
0
0
At ⁰
40
80
120
160
I C (A) 200
0
4
8
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
600
V
±15
V
4
Ω
T_j =
V_R =
I_F =
V_GE =
25/125 °C
600
V
100
A
±15
V
12
16
R g on ( Ω) 20
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
150
T_j = T_jmax -25°C
120
90
T_j = 25°C
60
30
Output inverter FRED
I_RRM
I_RRM
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
200
160
120
T_j = T_jmax - 25°C
80
T_j = 25°C
40
Output inverter FRED
I_RRM
I_RRM
0
0
At
T_j =
V_CE =
V_GE =
R_gon =
40
80
25/125 °C
600
V
±15
V
4
Ω
0
120
160
I C (A) 200
0
4
8
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
600
V
100
A
±15
V
12
16
R gon ( Ω ) 20
Copyright by Vincotech
7
Revision: 1