10-FZ122PA100FC01-P999F58 Datasheet, PDF (6/15 Pages) Vincotech – AlN substrate for improved performance

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
t_don
0.1
t_f
t_r
0.01
Output Inverter
10-FZ122PA100FC01-P999F58
10-F0122PA100FC01-P999F59
preliminary datasheet
Output inverter IGBT
t_doff
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
0.1
0.01
Output inverter IGBT
t_don
t_r
t_f
0.001
0
40
80
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
4
Ω
R_goff =
4
Ω
0.001
120
160 I C (A) 200
0
4
8
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
100
A
12
16 R G ( Ω ) 20
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(I_C)
0.8
Output inverter FRED
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0.8
Output inverter FRED
0.6
0.6
t_rr
T_j = T_jmax -25°C
T_j = T_jmax -25°C
t_rr
0.4
0.4
t_rr
t_rr
T_j = 25°C
T_j = 25°C
0.2
0.2
0
0
0
40
80
120
160
I C (A) 200
0
4
8
12
16 R _{g on} ( Ω ) 20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
600
V
±15
V
4
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
600
V
100
A
±15
V
Copyright by Vincotech
6
Revision: 1