10-FZ122PA100FC01-P999F58 Datasheet, PDF (3/15 Pages) Vincotech – AlN substrate for improved performance

Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
10-FZ122PA100FC01-P999F58
10-F0122PA100FC01-P999F59
preliminary datasheet
Value
Min
Typ
Max
Unit
V_GE(th) V_CE=V_GE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_{d(off) Rgoff=4 Ω}
±15
t_f
Rgon=4 Ω
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
±15
R_thJH
R_thJC
Thermal foil
thickness=76um
Kunze foil KU-ALF5
1200
0
600
25
0.0008
Tj=25°C
Tj=125°C
4.5
5.5
6.5
V
100
Tj=25°C
2.5
3.47
4
Tj=125°C
4.21
V
Tj=25°C
Tj=125°C
0.035
mA
Tj=25°C
Tj=125°C
700
nA
5
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
100
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
202
211
36
38
265
300
12
27
7.07
9.96
2.48
3.81
ns
mWs
6500
Tj=25°C
1000
pF
500
Tj=25°C
1100
nC
0.26
K/W
0.17
V_F
100
Tj=25°C
1
1.8
2.3
Tj=125°C
1.78
V
I_RRM
Tj=25°C
Tj=125°C
108.4
128.4
A
t_rr
Tj=25°C
Tj=125°C
274.8
313
ns
Q_rr Rgoff=4 Ω
±15
600
100
Tj=25°C
Tj=125°C
9.71
16.39
μC
di(rec)max
/dt
Tj=25°C
Tj=125°C
2827
1148
A/μs
Erec
Tj=25°C
Tj=125°C
3.61
6.19
mWs
R_thJH
R_thJC
Thermal foil
thickness=76um
Kunze foil KU-ALF5
0.59
K/W
0.39
Copyright by Vincotech
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