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10-FZ122PA100FC01-P999F58 Datasheet, PDF (1/15 Pages) Vincotech – AlN substrate for improved performance
fastPHASE0
Features
● Fast IGBT2 technology
● 2-clip housing in 12mm and 17mm height
● Compact and low inductance design
● AlN substrate for improved performance
Target Applications
● Power Generation
● UPS
● Welding
Types
● 10-FZ122PA100FC01-P999F58
● 10-F0122PA100FC01-P999F59
10-FZ122PA100FC01-P999F58
10-F0122PA100FC01-P999F59
preliminary datasheet
1200V/100A
flow0 housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
VCE
IC
ICpulse
Ptot
VGE
tSC
VCC
Tjmax
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Tj≤150°C
VGE=15V
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
VRRM
IF
IFRM
Ptot
Tjmax
Tj=25°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Value
Unit
1200
V
70
A
93
300
A
267
W
405
±20
V
10
μs
800
V
150
°C
1200
V
75
A
101
200
A
119
W
181
150
°C
Copyright by Vincotech
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Revision: 1