V23990-K229-A-PM Datasheet, PDF (7/18 Pages) Vincotech – Solderless interconnection

V23990-K229-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
10
Q_rr
8
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
10
8
6
6
Q_rr
4
4
2
2
0
At ⁰
0
10
20
30
40
I C (A) 50
0
20
40
At
At
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
36
Ω
T_j =
125
°C
V_R =
600
V
I_F =
25
A
V_GE =
±15
V
60
R g on ( Ω) 80
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
40
D1,D2,D3,D4,D5,D6,D7 FWD
35
I_RRM
30
25
20
15
10
5
0
0
10
20
30
40 I C (A)
50
At
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
36
Ω
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
40
I_RRM
35
D1,D2,D3,D4,D5,D6,D7 FWD
30
25
20
15
10
5
0
0
15
30
45
60
R gon ( Ω ) 75
At
T_j =
125
°C
V_R =
600
V
I_F =
25
A
V_GE =
±15
V
copyright Vincotech
7
Revision: 3.1