V23990-K229-A-PM Datasheet, PDF (10/18 Pages) Vincotech – Solderless interconnection

V23990-K229-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
10³
T1,T2,T3,T4,T5,T6,T7 IGBT
10²
100uS
1mS
10¹
100mS
10mS
DC
10⁰
10^-1
10⁰
10¹
10²
At
D=
T_h =
V_GE =
T_j =
single pulse
80
ºC
±15
V
T_jmax
ºC
10³
V CE (V)
Figure 27
T1,T2,T3,T4,T5,T6,T7 IGBT
Short circuit withstand time as a function of
gate-emitter voltage
t_sc = f(V_GE)
17,5
15
12,5
10
7,5
5
2,5
0
12
13
14
15
16
17
18
19
20
V GE (V)
At
V_CE =
800
V
T_j ≤
150
ºC
Figure 26
Gate voltage vs Gate charge
V_GE = f(Q_GE)
16
14
12
10
8
6
4
2
0
0
At
I_C =
40
25
80
A
T1,T2,T3,T4,T5,T6,T7 IGBT
120V
480V
120
160
200
240
Q g (nC)
Figure 28
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
V_GE = f(Q_GE)
250
225
200
175
150
125
100
75
50
25
0
12
13
14
15
16
17
18
19
20
V GE (V)
At
V_CE =
800
V
T_j ≤
150
ºC
copyright Vincotech
10
Revision: 3.1