V23990-K229-A-PM Datasheet, PDF (5/18 Pages) Vincotech – Solderless interconnection

V23990-K229-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
7
6
5
4
3
2
1
0
0
10
20
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
36
Ω
R_goff =
36
Ω
T1,T2,T3,T4,T5,T6,T7 IGBT
E_on
E_off
30
40
I C (A)
50
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
7
6
5
4
3
2
1
0
0
15
30
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
25
A
T1,T2,T3,T4,T5,T6,T7 IGBT
E_on
E_off
45
60
R G ( Ω ) 75
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
3,5
3
D1,D2,D3,D4,D5,D6,D7 FWD
E_rec
2,5
2
1,5
1
0,5
0
0
10
20
30
40
I C (A) 50
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
36
Ω
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
3,5
D1,D2,D3,D4,D5,D6,D7 FWD
3
2,5
E_rec
2
1,5
1
0,5
0
0
20
40
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
25
A
60
R G ( Ω ) 80
copyright Vincotech
5
Revision: 3.1