70-W212NMC600SH01-M700P Datasheet, PDF (4/31 Pages) Vincotech – High power screw interface

Parameter
half bridge IGBT ( T1 , T4 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
neutral point FWD ( D2 , D3 )
FWD forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
neutral point IGBT ( T2 , T3 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
70-W212NMC600SH01-M700P
Characteristic Values
Symbol
VGE [V] or
VGS [V]
Conditions
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off) _{Rgoff=0,5 Ω}
tf
Rgon=0,5 Ω
±15
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
15
RthJH
RthJC
Phase-Change
Material
thickness≤100um
1200
0
0,0208
600
350
600
25
960
600
VF
600
IRRM
trr
Qrr Rgon=0,5 Ω
±15
350
600
di(rec)max
/dt
Erec
RthJH
RthJC
Phase-Change
Material
thickness≤100um
VGE(th) VCE=VGE
0,0096
VCE(sat)
15
600
ICES
0
600
IGES
20
0
Rgint
td(on)
tr
td(off)
tf
Rgoff=1 Ω
Rgon=1 Ω
±15
350
600
Eon
Eoff
Cies
Coss f=1MHz
0
25
Crss
QGate
15
480
600
RthJH
RthJC
Phase-Change
Material
thickness≤100um
Value
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
5
5,8
6,5
V
1,4
2,22
2,4
2,75
V
0,08
mA
960
nA
1,25
245
256
44
54
301
349
34
57
10
18
14
24
35200
Ω
ns
mWs
2250
pF
1880
2775
nC
0,09
K/W
0,06
Tj=25°C
1,27
1,68
1,97
Tj=150°C
1,60
V
Tj=25°C
350
Tj=125°C
415
A
Tj=25°C
168
Tj=125°C
289
ns
Tj=25°C
24
Tj=125°C
45
µC
Tj=25°C
Tj=125°C
5978
3609
A/µs
Tj=25°C
Tj=125°C
5
10
mWs
0,24
K/W
0,16
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
5
5,8
6,5
V
1,05
1,54
1,85
1,80
V
0,0304
mA
2400
nA
0,5
270
274
41
45
351
374
39
70
6
8
17
23
36960
Ω
ns
mWs
2304
pF
1096
3760
nC
0,15
K/W
0,10
copyright by Vincotech
4
Revision: 1.1