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| 70-W212NMC600SH01-M700P Datasheet, PDF (10/31 Pages) Vincotech – High power screw interface | |||
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70-W212NMC600SH01-M700P
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
14000
12000
10000
8000
6000
4000
2000
0
0
200
400
600
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
0,5
â¦
Buck operation
half bridge IGBT (T1,T4) and neutral point FWD (D2,D3)
FWD
dIrec/dt T
dIo/dt T
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
15000
dIrec/dt T
dI0/dt T
12000
9000
6000
3000
800
1000 I C (A) 1200
0
0
2
4
6
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
600
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
FWD
8
R gon ( â¦) 10
FWD
10-1
D = 0,5
0,2
10-2
0,1
0,05
0,02
0,01
0,005
0.000
10-3
10-5
10-4
10-3
10-2
10-1
100
At
D=
RthJH =
tp / T
0,086
K/W
101 t p (s)
IGBT thermal model values
R (C/W)
0,037
0,019
0,023
0,003
0,005
Tau (s)
1,555
0,210
0,031
0,002
0,0003
10-1
D = 0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-3
10-5
10-4
10-3
10-2
10-1
100
101 t p (s)
At
D=
RthJH =
tp / T
0,244
K/W
FWD thermal model values
R (C/W)
0,046
0,048
0,046
0,074
0,018
Tau (s)
5,114
1,051
0,196
0,043
0,014
copyright by Vincotech
10
Revision: 1.1
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