70-W212NMC600SH01-M700P Datasheet, PDF (16/31 Pages) Vincotech – High power screw interface

70-W212NMC600SH01-M700P
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
50
40
30
20
10
0
0
At
200
400
600
At
T_j =
V_CE =
V_GE =
R_gon =
25/125/150 °C
350
V
±15
V
1
Ω
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
60
Q_{rr High T}
50
40
Q_{rr Low T}
30
20
10
0
800
1000
1200
I C (A)
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25/125/150 °C
350
V
600
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
700
600
500
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
800
600
400
400
300
200
200
I_{RRM High T}
100
I_{RRM Low T}
0
0
200
400
600
800
1000
1200
I C (A)
0
0
2
4
6
At
T_j =
V_CE =
V_GE =
R_gon =
25/125/150 °C
350
V
±15
V
1
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125/150 °C
350
V
600
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
8 R _gon ( Ω) 10
FWD
8 _{R gon ( Ω)}
10
copyright by Vincotech
16
Revision: 1.1