70-W212NMC600SH01-M700P Datasheet, PDF (17/31 Pages) Vincotech – High power screw interface

70-W212NMC600SH01-M700P
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI₀/dt,dI_rec/dt = f(Ic)
25000
20000
15000
10000
5000
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
dI_rec/dt _T
dI_o/dt _T
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI₀/dt,dI_rec/dt = f(R_gon)
30000
dI_rec/dt _T
dI₀/dt _T
25000
20000
15000
10000
5000
0
0
200
400
600
800
1000 _{I C (A)} 1200
0
0
2
4
6
At
T_j =
V_CE =
V_GE =
R_gon =
25/125/150 °C
350
V
±15
V
1
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125/150 °C
350
V
600
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z_thJH = f(t_p)
100
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z_thJH = f(t_p)
100
FWD
8 R _gon ( Ω) 10
FWD
10-1
10-1
D = 0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
10-3
10-5
10-4
10-3
10-2
10-1
100
0.000
101 t p (s)
102
At
D=
R_thJH =
tp / T
0,15
K/W
IGBT thermal model values
R (C/W)
0,05
0,02
0,03
0,03
0,01
Tau (s)
3,58
0,74
0,18
0,04
0,01
10-2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-3
10-5
10-4
10-3
10-2
10-1
100
101
t p (s) ¹⁰²
At
D=
R_thJH =
tp / T
0,20
K/W
FWD thermal model values
R (C/W)
0,02
0,03
0,05
0,07
0,03
Tau (s)
4,55
0,92
0,19
0,05
0,02
copyright by Vincotech
17
Revision: 1.1