70-W212NMC600SH01-M700P Datasheet, PDF (14/31 Pages) Vincotech – High power screw interface

70-W212NMC600SH01-M700P
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
40
30
20
10
0
0
200
400
600
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125/150 °C
350
V
±15
V
1
Ω
1
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
10
8
6
4
2
0
0
200
400
600
With an inductive load at
T_j =
25/125/150 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
1
Ω
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
IGBT
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
100
80
E_{off Low T}
60
40
E_{on High T}
E_{on Low T}
20
800
1000
1200
I C (A)
0
0
2
4
6
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125/150 °C
350
V
±15
V
600
A
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
12
10
8
E_{rec Low T}
6
4
2
0
800
1000
1200
I C (A)
0
2
4
6
With an inductive load at
T_j =
25/125/150 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
600
A
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
8 _{R G ( Ω )} 10
FWD
E_{rec High T}
E_{rec Low T}
8 _{R G ( Ω )} 10
copyright by Vincotech
14
Revision: 1.1