70-W212NMA400NB02-M209P62 Datasheet, PDF (3/30 Pages) Vincotech – High power screw interface

70-W212NMA400NB02-M209P62
Parameter
half bridge IGBT (T1, T4)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
neutral point FWD (D2, D3)
FWD forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_GE(th) V_CE=V_GE
V_CE(sat)
I_CES
I_GES
R_gint
t_d(on)
t_r
t_d(off)
t_f
Rgoff=1 Ω
Rgon=1 Ω
E_on
E_off
C_ies
C_oss f=1MHz
C_rss
Q_Gate
15
0
20
±15
0
±15
R_thJH
100um preapplied
PCM
R_thJC
100um grease
1W/mK
0,04
400
1200
0
350
400
25
600
400
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
5,5
6
6,5
V
1
1,90
3
2,21
V
2
mA
3000
nA
none
120
121
22
23
160
193
45
69
2,96
5,40
12,25
17,66
40000
Ω
ns
mWs
8000
pF
680
932
nC
0,11
K/W
0,13
V_F
300
Tj=25°C
1,2
1,59
2,26
Tj=125°C
1,48
V
I_RRM
Tj=25°C
245
Tj=125°C
320
A
t_rr
Tj=25°C
132
Tj=125°C
267
ns
Q_rr Rgon=1 Ω
±15
350
400
Tj=25°C
Tj=125°C
16
31
µC
di(rec)max
/dt
Tj=25°C
Tj=125°C
8684
3334
A/µs
Erec
Tj=25°C
Tj=125°C
4,06
7,81
mWs
R_thJH
100um preapplied
PCM
R_thJC
100um grease
1W/mK
0,31
K/W
0,36
copyright by Vincotech
3
Revision: 1.2