70-W212NMA400NB02-M209P62 Datasheet, PDF (18/30 Pages) Vincotech – High power screw interface

70-W212NMA400NB02-M209P62
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
60
50
40
30
20
10
0
0
At
100
200
300
At
T_j =
V_CE =
V_GE =
R_gon =
25 / 125 °C
350
V
±15
V
2
Ω
Boost operation
Neutral Point IGBT (T2, T3) & Half Bridge FWD ((D1, D4)
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
60
Q_{rr High T}
50
40
30
Q_{rr Low T}
20
10
400
500
600
I C (A)
0
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25 / 125 °C
350
V
300
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
500
400
300
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
500
400
300
200
200
I_{RRM High T}
I_{RRM Low T}
100
100
0
0
100
200
300
400
500 _{I C (A)} 600
0
0
2
4
6
At
T_j =
V_CE =
V_GE =
R_gon =
25 / 125 °C
350
V
±15
V
2
Ω
At
T_j =
V_R =
I_F =
V_GE =
25 / 125 °C
350
V
300
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
8
10
R gon ( Ω)
FWD
8
R gon ( Ω) ¹⁰
copyright by Vincotech
18
Revision: 1.2