70-W212NMA400NB02-M209P62 Datasheet, PDF (16/30 Pages) Vincotech – High power screw interface

70-W212NMA400NB02-M209P62
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
30
25
20
15
10
5
0
0
100
200
300
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25 / 125 °C
350
V
±15
V
2
Ω
2
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
15
12
Boost operation
Neutral Point IGBT (T2, T3) & Half Bridge FWD ((D1, D4)
IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
30
25
E_{off High T}
20
E_{off Low T}
15
E_{on High T}
10
E_{on Low T}
5
400
500 _{I C (A)} 600
0
0
2
4
6
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25 / 125 °C
350
V
±15
V
300
A
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
15
12
9
9
E_{rec Low T}
6
6
3
3
0
0
100
200
300
400
500
600
I C (A)
0
0
2
4
6
With an inductive load at
T_j =
25 / 125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
2
Ω
With an inductive load at
T_j =
25 / 125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
300
A
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
8 _{R G( Ω )} 10
FWD
E_{rec High T}
E_{rec Low T}
8 _{R G ( Ω )} 10
copyright by Vincotech
16
Revision: 1.2