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| 70-W212NMA400NB02-M209P62 Datasheet, PDF (19/30 Pages) Vincotech – High power screw interface | |||
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70-W212NMA400NB02-M209P62
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
16000
14000
12000
10000
8000
6000
4000
2000
0
0
100
200
300
At
Tj =
VCE =
VGE =
Rgon =
25 / 125 °C
350
V
±15
V
2
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Boost operation
Neutral Point IGBT (T2, T3) & Half Bridge FWD ((D1, D4)
dIrec/dt T
dIo/dt T
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
25000
dIrec/dt T
dI0/dt T
20000
15000
10000
5000
400
500
I C (A)600
0
0
2
4
6
At
Tj =
VR =
IF =
VGE =
25 / 125 °C
350
V
300
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
FWD
8
R gon ( â¦) 10
FWD
10-1
10-1
10-2
10-3
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,19
K/W
IGBT thermal model values
R (C/W)
0,02
0,03
0,03
0,06
0,04
0,01
Tau (s)
5,05
1,19
0,24
0,05
0,02
0,00
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 101
10-2
10-3
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,18
K/W
FWD thermal model values
R (C/W)
0,02
0,03
0,05
0,06
0,01
0,01
Tau (s)
4,17
0,86
0,15
0,03
0,01
0,00
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 101
copyright by Vincotech
19
Revision: 1.2
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