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70-W212NMA400NB02-M209P62 Datasheet, PDF (11/30 Pages) Vincotech – High power screw interface
70-W212NMA400NB02-M209P62
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
30000
25000
20000
15000
10000
5000
0
0
200
400
At
Tj =
VCE =
VGE =
Rgon =
25 / 125 °C
350
V
±15
V
1
Ω
Buck operation
Half Bridge IGBT (T1, T4) & Neutral Point FWD (D2, D3)
dIo/dt T
dIrec/dt T
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
14000
12000
dIrec/dt T
dI0/dt T
10000
8000
6000
4000
2000
600
I C (A) 800
0
0
2
4
6
At
Tj =
VR =
IF =
VGE =
25 / 125 °C
350
V
400
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
FWD
8
R gon ( Ω) 10
FWD
10-1
10-1
D = 0,5
0,2
10-2
0,1
10-2
0,05
0,02
0,01
0,005
0.000
10-3
10-5
10-4
10-3
10-2
10-1
100
t p (s)
110012
10-3
10-5
10-4
10-3
10-2
At
At
D=
RthJH =
tp / T
0,11
K/W
D=
RthJH =
tp / T
0,31
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,02
0,02
0,02
0,04
0,01
0,01
Tau (s)
2,9E+00
6,6E-01
1,3E-01
3,1E-02
5,0E-03
5,6E-04
R (C/W)
0,04
0,04
0,06
0,11
0,04
0,02
Tau (s)
5,1E+00
1,1E+00
1,8E-01
3,7E-02
1,1E-02
1,8E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 110012
copyright by Vincotech
11
Revision: 1.2