10-F107NIB150SG06-M136F39 Datasheet, PDF (3/24 Pages) Vincotech – Switching with high speed components

Parameter
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Buck Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
10-F107NIB150SG06-M136F39
10-P107NIB150SG06-M136F39Y
Characteristic Values
datasheet
Symbol
Conditions
V _GE [V]
or
V _GS [V]
V _r [V]
or
V _CE [V]
or
V _DS [V]
I _C [A]
or
I _F [A]
or
I _D [A]
T _j [°C]
Value
Unit
Min Typ Max
V _GE(th)
V _CEsat
I _CES
I _GES
R _gint
t _d(on)
t_r
t _d(off)
t_f
E _on
E _off
C _ies
C _oss
C _rss
Q_G
R _th(j-s)
V CE=V GE
R goff=4 Ω
R gon=4 Ω
f=1MHz
phase-change
material
ʎ=3,4W/mK
15
0
20
±15
0
15
650
0
350
25
480
0,0024
25
150
150
25
150
25
150
25
150
25
150
25
150
25
150
150
25
150
25
150
25
150
25
150
25
4,2
1,38
5,1
1,94
2,26
none
147
149
30
34
197
219
18
27
1,53
2,45
1,69
2,68
9240
480
274
940
5,6
V
2,22
V
0,0076
mA
300
nA
Ω
ns
mWs
pF
nC
0,34
K/W
V_F
I_r
I _RRM
t _rr
Q _rr
R gon=4 Ω
( di _rf/dt )_max
E _rec
R _th(j-s)
phase-change
material
ʎ=3,4W/mK
±15
650
350
160
150
25
150
25
150
25
150
25
150
25
150
25
150
25
150
1,67
2,01
104
157
59
97
5
10
6885
3093
0,92
2,07
0,39
1,7
V
160
µA
A
ns
µC
A/µs
mWs
K/W
copyright Vincotech
3
08 Sep. 2015 / Revision 5