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| 10-F107NIB150SG06-M136F39 Datasheet, PDF (16/24 Pages) Vincotech – Switching with high speed components | |||
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10-F107NIB150SG06-M136F39
10-P107NIB150SG06-M136F39Y
datasheet
Boost
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
10000
dIo/dt T
dIrec/dt T
8000
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
10000
dI0/dt T
dIrec/dt T
8000
FWD
6000
6000
4000
4000
2000
2000
0
0
50
100
150
200
At
Tj =
V CE =
V GE =
R gon =
25/150 °C
350
V
±15
V
4
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
100
250 I C (A) 300
IGBT
0
0
4
8
12
At
Tj =
VR =
IF =
V GE =
25/150 °C
350
V
150
A
±15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
100
16
20
R gon (â¦)
FWD
10-1
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s) 101
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s) 101
At
D=
R thJH =
tp / T
0,29
K/W
At
D=
R thJH =
tp / T
0,47
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,04
0,05
0,08
0,09
0,02
0,01
Tau (s)
3,0E+00
7,9E-01
1,4E-01
4,3E-02
3,8E-03
6,0E-04
R (K/W)
0,05
0,07
0,10
0,14
0,06
0,05
Tau (s)
4,1E+00
9,2E-01
1,4E-01
3,8E-02
9,0E-03
2,0E-03
copyright Vincotech
16
08 Sep. 2015 / Revision 5
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