10-F107NIB150SG06-M136F39 Datasheet, PDF (13/24 Pages) Vincotech – Switching with high speed components

10-F107NIB150SG06-M136F39
10-P107NIB150SG06-M136F39Y
datasheet
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Figure 5
Typical switching energy losses
as a function of collector current
E = f(I _C)
12
10
8
6
4
2
0
0
50
100
150
200
With an inductive load at
T_j =
V _CE =
V _GE =
25/150 °C
350
V
±15
V
R _gon =
4
Ω
R _goff =
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E _rec = f(I _c)
5
4
IGBT
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
12
10
E_{off Low T}
8
6
E_{on High T}
4
E_{on Low T}
2
250
300
I C (A)
0
0
4
8
12
With an inductive load at
T_j =
V _CE =
V _GE =
25/150 °C
350
V
±15
V
I_C =
150
A
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
5
4
3
3
E_{rec Low T}
2
2
1
1
0
0
0
50
100
150
200
250 _{I C (A)} 300
0
4
8
12
With an inductive load at
T_j =
25/150 °C
V _CE =
350
V
V _GE =
±15
V
R _gon =
4
Ω
With an inductive load at
T_j =
25/150 °C
V _CE =
350
V
V _GE =
±15
V
I_C =
150
A
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
16 _{R G( Ω )} 20
FWD
E_{rec High T}
E_{rec Low T}
16 _{R G ( Ω )} 20
copyright Vincotech
13
08 Sep. 2015 / Revision 5