10-F107NIB150SG06-M136F39 Datasheet, PDF (15/24 Pages) Vincotech – Switching with high speed components

10-F107NIB150SG06-M136F39
10-P107NIB150SG06-M136F39Y
datasheet
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Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
18
15
12
9
6
3
0
0
50
100
150
200
At
T_j =
V _CE =
V _GE =
R _gon =
25/150 °C
350
V
±15
V
4
Ω
FWD
Q_{rr High T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
18
15
12
9
Q_{rr Low T}
6
3
250 _{I C (A)} 300
0
0
4
8
12
At
T_j =
V_R =
I_F =
V _GE =
25/150 °C
350
V
150
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
16 _{R gon ( Ω )} 20
Figure 15
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
180
150
120
90
60
30
0
0
50
100
150
200
At
T_j =
V _CE =
V _GE =
R _gon =
25/150 °C
350
V
±15
V
4
Ω
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
180
I_{RRM High T}
150
120
I_{RRM Low T}
90
60
30
250
300
I C (A)
0
0
4
8
12
At
T_j =
V_R =
I_F =
V _GE =
25/150 °C
350
V
150
A
±15
V
FWD
I_{RRM High T}
I_{RRM Low T}
16
20
R gon (Ω)
copyright Vincotech
15
08 Sep. 2015 / Revision 5