10-F107NIB150SG06-M136F39 Datasheet, PDF (14/24 Pages) Vincotech – Switching with high speed components

Figure 9
Typical switching times as a
function of collector current
t = f(I _C)
1
t_doff
t_don
0,1
t_f
t_r
0,01
10-F107NIB150SG06-M136F39
10-P107NIB150SG06-M136F39Y
datasheet
Boost
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R _G)
1
0,1
0,01
IGBT
t_doff
t_don
t_r
t_f
0,001
0,001
0
50
100
150
200
250 _{I C (A)} 300
0
4
8
12
With an inductive load at
T_j =
150
°C
V _CE =
350
V
V _GE =
±15
V
R _gon =
4
Ω
R _goff =
4
Ω
With an inductive load at
T_j =
150
°C
V _CE =
350
V
V _GE =
±15
V
I_C =
150
A
Figure 11
Typical reverse recovery time as a
function of collector current
t _rr = f(I _c)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0
50
100
150
200
At
T_j =
V _CE =
V _GE =
R _gon =
25/150 °C
350
V
±15
V
4
Ω
FWD
t_{rr High T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t _rr = f(R _gon)
0,5
0,4
0,3
t_{rr Low T}
0,2
0,1
250
300
0,0
I C (A)
0
4
8
12
At
T_j =
V_R =
I_F =
V _GE =
25/150 °C
350
V
150
A
±15
V
16
R G ( Ω ) ²⁰
FWD
t_{rr High T}
t_{rr Low T}
16 _{R gon (Ω)} 20
copyright Vincotech
14
08 Sep. 2015 / Revision 5