UF630 Datasheet, PDF (7/8 Pages) Unisonic Technologies – 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS

UF630
TYPICAL CHARACTERISTICS (cont.)
FIGURE 13. TRANSFER CHARACTERISTICS
10
Pulse Duration=80DŽs
Duty Cycle = 0.5% Max
8 _{VDS>ID(ON)×RDS(ON)MAX}
6
125Â¥
4
25Â¥
-40Â¥
2
0
01
2
3
4
5
6
7
GATE TO SOURCE VOLTAGE , VGS (V)




FIGURE 15. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.2
Pulse Duration=80DŽs
Duty Cycle = 0.5% Max
1.8 _{VGS =10V, ID=5A}
1.4
1
0.6
0.2
-40
0
40
80
120
JUNCTION TEMPERATURE, T_J (Â¥)




FIGURE 17. CAPACITANCE vs DRAIN TO SOURCE
VOLTAGE
2000
1600
1200
V_GS = 0V, f = 1MHz
CISS = CGS + CGD, CDS
C_RSS = C_GD
C_OSS = C_DS + C_GD
800
400
0
1






C_ISS
C_OSS
CRSS
10
20
30
30
50
DRAIN TO SOURCE VOLTAGE, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MOSFET
FIGURE 14. DRAIN TO SOURCE ON RESISTANCE
vs GATE VOLTAGE AND DRAIN CURRENT
0.8 _{2DŽs Pulse Test}
0.6
VGS=10V
0.4
0.2
0
0
VGS=20V
10
20
30
DRAIN CURRENT, ID (A)
40


FIGURE 16. NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
1.25
I_D=250DŽA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
JUNCTION TEMPERATURE, T_J (Â¥)
160


FIGURE 18. TRANSCONDUCTANCE vs DRAIN
CURRENT
10 _{Pulse Duration=80DŽs}
Duty Cycle = 0.5% Max
8
6
-40Â¥
25Â¥
4
125Â¥
2
0
0
2
4
6
8
10
DRAIN CURRENT, ID (A)


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QW-R502-049,B