 English |
|
|
|
|
|
|
|
| UF630 Datasheet, PDF (2/8 Pages) Unisonic Technologies – 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS | |||
| |||
| ◁ |
UF630
MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25Â¥, Unless Otherwise Specified)
PARAMETER
Drain to Source Voltage (TJ =25Â¥~125Â¥)
Drain to Gate Voltage (RGS = 20kâ¦, TJ =25Â¥~125Â¥)
Gate to Source Voltage
Continuous
Drain Current
Ta = 100Â¥
SYMBOL
VDS
VDGR
VGS
ID
RATINGS
200
200
±20
9
6
UNIT
V
V
V
A
A
Maximum Power Dissipation (Ta = 25Â¥
Derating above 25Â¥
Pulsed
IDM
36
A
75
W
PD
0.6
W/Ä
Single Pulse Avalanche Energy Rating
(VDD=20V, starting TJ =25Â¥, L=3.37mH, RG=50â¦, peak IAS = 9A)
EAS
150
mJ
Operation and Storage Temperature
TJ, TSTG
-40 ~ +150
Ä
Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.
ELECTRICAL SPECIFICATIONS (TC =25Â¥, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 16)
200
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2
On-State Drain Current (Note 1)
ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V
9
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS=0.8xRated BVDSS,VGS=0V,TJ= 125Â¥
Gate to Source Leakage Current
IGSS VGS = ±20V
Drain to Source On Resistance
(Note 1)
RDS(ON) ID = 5A, VGS = 10V (Figure 14, 15)
Forward Transconductance (Note 1)
gFS
VDS > ID(ON) x RDS(ON)MAX, ID = 5A
(Figure 18)
3
Turn-On Delay Time
tDLY(ON)
Rise Time
Turn-Off Delay Time
tR
VDD = 90V, IDâ9A, RGS = 9.1â¦, VGS = 10V
tDLY(OFF) RL = 9.6⦠(Note 2)
Fall Time
tF
Total Gate Charge
Gate to Source Charge
Gate to Drain âMillerâ Charge
QG(TOT)
QGS
QGD
VGS = 10V, ID = 9A,
VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA (Figure 20) (Note 3)
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V, f = 1.0MHz
(Figure 17)
NOTE : 1. Pulse Test: Pulse widthâ¤300µs, Duty Cycleâ¤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
V
4V
A
25 µA
250 µA
±100 nA
0.25 0.85 â¦
4.8
S
30 ns
50 ns
50 ns
40 ns
19 30 nC
10
nC
9
nC
600
pF
250
pF
80
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-049,B
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese