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| UF630 Datasheet, PDF (1/8 Pages) Unisonic Technologies – 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS | |||
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UNISONIC TECHNOLOGIES CO., LTD
UF630
9A, 200V, 0.4⦠, N-CHANNEL
POWER MOSFETS
MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
FEATURES
* 9A, 200V, Low RDS(ON)(0.4â¦)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
2.Drain
1
TO-220
1
TO-220F
*Pb-free plating product number: UF630L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UF630-TA3-T
UF630L-TA3-T
UF630-TF3-T
UF630L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
UF630L-TA 3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-049,B
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