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| UF630 Datasheet, PDF (3/8 Pages) Unisonic Technologies – 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS | |||
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UF630
MOSFET
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL MIN
Internal Drain Inductance
Measured from the contact screw on tab to center of die
LD
Measured from the drain lead(6mm from package) to center of die
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
LS
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
D
TYP
3.5
4.5
7.5
MAX UNIT
nH
nH
nH
LD
G
LS
S
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
SYMBOL
ÇJA
ÇJc
RATINGS
80
1.67
UNIT
Ä/W
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
(Note 1)
VSD TJ = 25Â¥, ISD = 9.0A, VGS =0V (Figure 19)
Continuous Source to Drain Current
Pulse Source to Drain Current
Reverse Recovery Time
Reverse Recovery Charge
ISD
ISDM
Note 2
tRR TJ = 150¥, ISD = 9.0A, dISD/dt = 100A/µs
QRR TJ = 150¥, ISD = 9.0A, dISD/dt = 100A/µs
NOTE : 1. Pulse Test: Pulse widthâ¤300µs, Duty Cycleâ¤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP MAX UNIT
2V
8A
36 A
450
ns
3
µC
D
G
S
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-049,B
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