UF630 Datasheet, PDF (6/8 Pages) Unisonic Technologies – 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS

UF630
TYPICAL CHARACTERISTICS
FIGURE 7. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
CASE TEMPERATURE, T_C (Â¥)
FIGURE 9. NORMALIZED TRANSIENT THERMAL
IMPEDANCE
1.0
0.5
0.2
0.1
0.1 _0.05
0.02
0.01
P_DM
t1
t2
0.01
10^-5
Single pulse _{Duty Factor, D=t1/t2}
Peak T_J =P_DM×Z_ȬJC R_ȬJC +T_C
10^-4
10^-3
10^-2
10^-1
1
10
RECTANGULAR PULSE DURATION, t₁ (s)
FIGURE 11. OUTPUT CHARACTERISTICS
20
16
12
8
4
0
0


V_GS=10V
V_GS=8V
Pulse Duration=80DŽs
Duty Cycle = 0.5% Max
VGS=7V
V_GS=6V
VGS=5V
V_GS=4V
20
40
60
80
100
DRAIN TO SOURCE VOLTAGE, V_DS, (V)
MOSFET
FIGURE 8. MAXIMUM CONTIONUOUS DRAIN
CURRENT vs CASE TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
CASE TEMPERATURE, T_C (Â¥)
FIGURE 10. FORWARD BIAS SAFE OPERATING
AREA
100
10
10DŽs
100DŽs
1ms
1
Operation in This Area
10ms
May be Limited by r_{DS (on)}
100ms
DC
T_C=25Â¥
0.1 ^{TJ=Max Rated}
1
10
100
1000
DRAIN TO SOURCE VOLTAGE, V_DS (V)
FIGURE 12. SATURATION CHARACTERISTICS
10
Pulse Duration=80DŽs
Duty Cycle = 0.5% Max
8
6
4
V_GS=10V
V_GS=9V
V_GS=8V
V_GS=7V
VGS=6V
VGS=5V
2
V_GS=4V
0
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE, V_DS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-049,B