SSM6L11TU_09 Datasheet, PDF (7/9 Pages) Toshiba Semiconductor – High Speed Switching Applications

Q2(Pch MOS FET)
|Yfs| - ID
10
25°C
1
-25°C
Ta=100°C
Common Source
VDS=-3V
Ta=25°C
0
-10
-100
-1000
-10000
Drain current ID (mA)
1000
C - VDS
Ciss
100
Common Source
VGS=0V
f =1MHz
Ta=25°C
Coss
Crs s
10
-0
-1
-10
Drain-Source voltage VDS (V)
-100
SSM6L11TU
1600
1400
1200
IDR - VDS
Common Source
VGS=0V
Ta=25°C
1000
800
600
400
200
0
0.0
0.2
0.4
0.6
0.8
1.0
Drain-Source voltage VDS (V)
1000
toff
100
tf
ton
10
tr
t - ID
Common Source
VDD=-10V
VGS=0~-2.5V
Ta=25°C
1
-10
-100
-1000
Drain current ID (mA)
-10000
7
2009-10-07