SSM6L11TU_09 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6L11TU
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L11TU
High Speed Switching Applications
• Optimum for high-density mounting in small packages
• Low ON-resistance Q1: R_DS(ON) = 395mΩ (max) (@V_GS = 1.8 V)
Q2: R_DS(ON) = 430mΩ (max) (@V_GS = -2.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
2.1±0.1
1.7±0.1
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
20
V
Gate-source voltage
V_GSS
± 12
V
Drain current
DC
I_D
Pulse
I_DP
0.5
A
1.5
Q2 Absolute Maximum Ratings (Ta = 25°C)
1
6
2
5
3
4
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
-20
V
Gate-source voltage
V_GSS
± 12
V
Drain current
DC
I_D
-0.5
A
Pulse
I_DP
-1.5
Absolute Maximum Ratings (Q1,Q2 Common)
(Ta = 25°C)
1.Source1
2.Gate1
3.Drain2
UF6
4.Source2
5.Gate2
6.Drain1
JEDEC
―
Characteristics
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
P_D
500
mW
(Note 1)
T_ch
150
°C
T_stg
−55 to 150
°C
JEITA
―
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Marking
654
Equivalent Circuit (top view)
6
5
4
K8
123
Q1
Q2
1
2
3
1
2009-10-07