SSM6L11TU_09 Datasheet, PDF (6/9 Pages) Toshiba Semiconductor – High Speed Switching Applications

Q2(Pch MOS FET)
-1600
-1400
-1200
-1000
-800
-600
-400
-200
0
0
ID - VDS
-5_-5.0_.0
-_-3₃.0_.0
-4_-4.0_.0
-2.0
-^-1¹.^.8⁸
VVGGSS==--1..6
C_Co_om_mm_{ソmー}o_on_スnS_接So_地ou_urc_rce_e
T_Ta_a=₌2₂5_T5a°_℃C_=25℃
-0.2
-0.4
-0.6
-0.8
-1
Drain-Source voltage VDS (V)
RDS(ON) - ID
500
400
--22..55VV
300
200
VGS=-4V
VGS=-4V
100
0
0
CCommm_ソoo_ーnn_スS_接ou_地rce
T^Ta^a=⁼2²5^5T℃^{°aC=25℃}
-200 -400 -600 -800 -1000 -1200 -1400 -1600
Drain current ID (mA)
RDS(ON) - Ta
500
CC_ソo_ーomm_スmm_接oon_地nSSoouurcrcee
ID^II^DD==⁼--^-22²55⁵00⁰mm^mAA^A
400
-2.5V
-2.5V
300
VGS=-4V
200
VGS=-4V
100
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
SSM6L11TU
-10000
ID - VGS
-1000
-100
-10
Ta=100°C
-1
- 0.1
- 0.01
0
-
25°
-25°C
Common Source
VDS=-3V
-1
-2
-3
Gate-Source voltage VGS (V)
RDS(ON) - VGS
500
Common Source
ID=-250m A
400
300
200
Ta=100°C
25°C
100
-25°C
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-Source voltage VGS (V)
-1
Vth - Ta
-0.8
-0.6
-0.4
-0.2 ^{Common Source}
ID=-0.1m A
VDS=-3V
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
6
2009-10-07