SSM6L11TU_09 Datasheet, PDF (4/9 Pages) Toshiba Semiconductor – High Speed Switching Applications

Q1(Nch MOS FET)
ID - VDS
1600
5.0
1¹.^.8⁸
1400
1₁._.6₆
1200
1000
800
4.₄03_.30^..0022.0.0
5.0
V_VG_GS_S=₌1₁._.4₄V_V
600
400
200
0
0
C_Co_om_mm_mo_on_n S_So_ou_ur_rc_ce_e
T^Ta^a=⁼2²5⁵℃^{°Cソース接地}
Ta=25℃
0.2
0.4
0.6
0.8
1
Drain-Source voltage VDS (V)
200
180
160
140
120
100
80
60
40
20
0
0
RDS(ON) - ID
1.8V
2.5V
VGS=4V
Common Source
Ta=25°C
200 400 600 800 1000 1200 1400 1600
Drain current ID (mA)
RDS(ON) - Ta
400
Common Source
350 _ID=250mA
300
250
1.8V
200
2.5V
150
VGS=4V
100
50
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
SSM6L11TU
10000
ID - VGS
1000
100
Ta=100°C
10
1
0.1
0.01
0
25°C
-25°C
Common Source
VDS=3V
1
2
3
Gate-Source voltage VGS (V)
RDS(ON) - VGS
400
Common Source
350
ID=250m A
300
250
200
25°C
150
Ta=100°C
100
-25°C
50
0
0 1 2 3 4 5 6 7 8 9 10
Gate-Source voltage VGS (V)
1
Vth - Ta
Common Source
ID=0.1m A
0.8
VDS=3V
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
4
2009-10-07