SSM6L11TU_09 Datasheet, PDF (5/9 Pages) Toshiba Semiconductor – High Speed Switching Applications

Q1(Nch MOS FET)
|Yfs| - ID
10
25°C
-25°C
Ta=100°C
1
Common Source
VDS=3V
Ta=25°C
0
10
100
1000
10000
Drain current ID (mA)
1000
C - VDS
Ciss
100
Common Source
VGS=0V
f =1MHz
Ta=25°C
Coss
Crs s
10
0.1
1
10
100
Drain-Source voltage VDS (V)
SSM6L11TU
1600
1400
1200
1000
800
600
IDR - VDS
Common Source
VGS=0V
Ta=25°C
D
G
IDR
S
400
200
0
0
-0.2
-0.4
-0.6
-0.8
-1
Drain-Source voltage VDS (V)
1000
toff
100
tf
ton
10
tr
t - ID
Common Source
VDD=10V
VGS=0_~2.5V
Ta=25°C
1
10
100
1000
10000
Drain current ID (mA)
5
2009-10-07