TA1287PG Datasheet, PDF (6/24 Pages) Toshiba Semiconductor – BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC

TA1287PG,TA1287FG
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Voltage
Input Pin Voltage
Power Consumption
TA1287PG
TA1287FG
Power
Consumption
Reduction Ratio
TA1287PG
TA1287FG
Operating Temperature
Storage Temperature
V_CCmax
V_in
P_DD
(Note 1)
P_DF
(Note 1)
1 / θ_jaD
1 / θ_jaF
T_opr
T_stg
12
GND − 0.3 to V_CC + 0.3
1400
641
−11.2
−5.13
−20~65
−55~150
V
V
mW
mW / °C
mW / °C
°C
°C
Note 1: Refer to the figure below.
Note 2: It is possible that TA1287FG function faultily caused by leak problems according to a field intensity from CRT.
Put IC lay-out position to CRT be far more than 20 cm. If there is not a enough distance, intercept it by a
shield.
Fig. Power consumption reduction against ambient temperature
6
2004-08-03