TA1287PG Datasheet, PDF (16/24 Pages) Toshiba Semiconductor – BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC

NOTE
ITEM
A₁₁
B Gain
(Input to Pin 8)
(Mixing Mode)
A₁₂ YUV Input Dynamic Range
(Through Mode)
SW₉
A
B
A
B
A
B
B
A₁₃ RGB Input Dynamic Range
B
(Through Mode)
A₁₄ R Input Dynamic Range
A
(Input to Pin 6)
(Matrix Mode)
TA1287PG,TA1287FG
TEST CONDITION (UNLESS OTHERWISE SPECIFIED, V_CC = 9 V and Ta = 25 ± 3°C)
SW₁₀
SW MODE
SW₁₁
SW_16A
SW_16B
SW_16C
MEASURING METHOD
B
B
B
B
B
1) Calculate gains of B-IN (pin 8) to U-OUT (pin 15), in
A
B
the same way as NOTE A₆. (SW₈ = A)
A
B
B
A
B
A
A
A
B
B
B
B
B
1) Input Signal into pin 4.
2) Supply DC 0V to YS1 (pin 9), YS2 (pin 10), YS3
(pin 11).
3) Input Signal 2 (f₀ = 100 kHz, V₀ = 0.2 V_p-p) into
V-IN (pin 1, SW₁ = A).
4) Increase the amplitude of input-signal 2 gradually.
Measure the biggest amplitude of input-signal 2
without any distortion on V-OUT wave shape.
(DTRY)
5) Measure in the same way as (pin 3) to (pin 4) for
Y-IN (pin 2, SW₂ = A) and U-IN (pin 3, SW₃ = A),
DTY : Y-IN (pin 2)
to Y-OUT (pin 14)
DTBY : U-IN (pin 3)
to U-OUT (pin 15)
B
B
B
B
B
1) Measure in the same way as NOTE A₁₂ for R-IN
(pin 6, SW₆ = A) G-IN (pin 7, SW₇ = A) and B-IN
(pin 8, SW₈ = A).
A
A
B
B
A
1) For each combination of SW_{16A, 16B} and _16C,
A
B
A
measure each item in the same way as 1) to 4) of
A
A
A
NOTE A₁₂.
(SW₆ = A, R-IN (pin 6) to V-OUT (pin 13))
DRP : PAL
DRNU : NTSC, UV
DRNI : NTSC, IQ
16
2004-08-03