HN7G09FE Datasheet, PDF (6/8 Pages) Toshiba Semiconductor – Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications

Q2 (MOSFET)
1000
Common Source
500 _{VDS = 3 V}
300 Ta = 25°C
⎪Y_fs⎪ – I_D
100
50
30
10
5
3
1
1
10
100
Drain current ID (mA)
1000
HN7G09FE
I_DR – V_DS
250
Common Source
VGS = 0 V
200 ^{Ta = 25°C}
D
150
G
100
IDR
S
50
0
0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4
Drain-Source voltage VDS (V)
10000
5000
3000
toff
1000 ^tf
500
300
t – I_D
Common Source
VDD = 5 V
VGS = 0~5 V
Ta = 25°C
100
50 ^ton
30
tr
10
0.1
1
10
100
Drain current ID (mA)
10000
5000
3000
toff
1000
500
tf
300
ton
100
tr
50
30
t – I_D
Common Source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
10
0.1
1
10
100
Drain current ID (mA)
100
50
30
10
5
3
1
0.5
0.3
0.1
0.1
C – V_DS
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
1
10
100
Drain-Source voltage VDS (V)
6
2007-11-01