HN7G09FE Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications

Q1 (Transistor) Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
Test Condition
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_I(ON)
V_I(OFF)
f_T
C_ob
R1
R1/R2
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_E = 0
V_EB = 10 V, I_C = 0
V_CE = 5 V, I_C = 10 mA
I_C = 5 mA, I_B = 0.25 mA
V_CE = 0.2 V, I_C = 5 mA
V_CE = 5 V, I_C = 0.1 mA
V_CE = 10 V, I_C = 5 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
⎯
⎯
HN7G09FE
Min Typ.
⎯
⎯
⎯
⎯
0.082 ⎯
80
⎯
⎯
0.1
1.5
⎯
1.0
⎯
⎯
250
⎯
3
32.9 47
0.9 1.0
Max
100
500
0.15
⎯
0.3
5.0
1.5
⎯
⎯
61.1
1.1
Unit
nA
nA
mA
V
V
V
MHz
pF
kΩ
Q2 (MOSFET) Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
|Y_fs|
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = ±16 V, V_DS = 0
I_D = 0.1 mA, V_GS = 0
V_DS = 30 V, V_GS = 0
V_DS = 3 V, I_D = 0.1 mA
V_DS = 3 V, I_D = 10 mA
I_D = 10 mA, V_GS = 4 V
I_D = 10 mA, V_GS = 2.5 V
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DD = 5 V, I_D = 10 mA,
V_GS = 0~5 V
Min Typ. Max Unit
⎯
⎯
±1
μA
30
⎯
⎯
V
⎯
⎯
1
μA
0.8
⎯
1.5
V
25
⎯
⎯
mS
⎯
2.2
4.0
Ω
⎯
4.0
7.0
⎯
7.8
⎯
pF
⎯
3.6
⎯
pF
⎯
8.8
⎯
pF
⎯
50
⎯
ns
⎯ 180 ⎯
2
2007-11-01