HN7G09FE Datasheet, PDF (5/8 Pages) Toshiba Semiconductor – Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications

Q2 (MOSFET)
250
10 4
200
150
100
I_D – V_DS
Common Source
Ta = 25°C
3
2.7
2.5
2.3
50
VGS = 2.1 V
0
0
0.5
1
1.5
2
Drain-Source voltage VDS (V)
HN7G09FE
1000
Common Source
VDS = 3 V
100
I_D – V_GS
Ta = 100°C
10
25°C
1
−25°C
0.1
0.01
0
1
2
3
4
Gate-Source voltage VGS (V)
R_{DS (ON)} –I_D
10
Common Source
Ta = 25°C
8
6
VGS = 2.5 V
4
4V
2
0
0
40
80
120
160
200
Drain current ID (mA)
R_{DS (ON)} – V_GS
6
Common Source
ID = 10 mA
5
4
Ta = 100°C
3
25°C
2
−25°C
1
0
0
2
4
6
8
10
Gate-Source voltage VGS (V)
R_{DS (ON)} – Ta
8
Common Source
7 ^{ID = 10 mA}
6
5
VGS = 2.5 V
4
3
4V
2
1
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
V_th – Ta
2
Common Source
1.8 ID = 0.1 mA
VDS = 3 V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
5
2007-11-01