HN7G09FE Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications

HN7G09FE
Switching Time Test Circuit
(a) Test circuit
(b) V_IN
5V
IN
0
10 μs
V_DD = 5 V
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 Ω)
Common source
Ta = 25°C
OUT
R_L
V_{DD (c) VOUT}
5V
0V
V_DD
V_{DS (ON)}
10%
90%
10%
90%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as the voltage between gate and source when the low operating current value is I_D = 100
μA for this product. For normal switching operation, V_{GS (on)} requires a higher voltage than V_th and V_{GS (off)}
requires a lower voltage than V_th. (The relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)}.)
Take this into consideration when using the device.
A V_GS recommended voltage of 2.5 V or higher is required for turning on this product.
3
2007-11-01