HN7G09FE Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications

TOSHIBA Multichip Discrete Device
HN7G09FE
HN7G09FE
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
Unit: mm
Q1 (transistor): RN1104F equivalent
Q2 (MOSFET): SSM3K15FS equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
Unit
50
V
50
V
10
V
100
mA
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
1. EMITTER
2. BASE
3. DRAIN
4. SOURCE
5. GATE
6. COLLECTOR
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
DC drain current
DC
Pulse
V_DS
V_GSS
I_D
I_DP
20
V
± 20
V
100
mA
200
Q1, Q2 Common Ratings (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight:0.003 g (typ.)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P_C (Note 1)
100
mW
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Marking
Equivalent Circuit (top view)
654
77
Q1
Q2
123
1
2007-11-01