SSM6K211FE_14 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS3)

1000
r_th – t_w
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
100
10
1
0.001
0.01
0.1
1
10
100
Pulse width t_w (s)
1000
SSM6K211FE
1000
800
600
400
P_D – T_a
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm,
Cu Pad: 645 mm²)
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature T_a (°C)
5
2014-03-01