SSM6K211FE_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS3)

SSM6K211FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
SSM6K211FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5-V drive
• Low ON-resistance:
R_on = 118 mΩ (max) (@V_GS = 1.5 V)
R_on = 82 mΩ (max) (@V_GS = 1.8 V)
R_on = 59 mΩ (max) (@V_GS = 2.5 V)
R_on = 47 mΩ (max) (@V_GS = 4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V_DSS
20
V
Gate-source voltage
V_GSS
± 10
V
Drain current
DC
I_D
Pulse
I_DP
3.2
A
6.4
Drain power dissipation
P_D (Note 1)
500
mW
Channel temperature
T_ch
150
°C
ES6
1,2, 5, 6: Drain
3: Gate
4: Source
Storage temperature
T_stg
−55 to 150
°C
JEDEC
―
Note:Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
―
2-2N1J
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
Weight: 3 mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
Equivalent Circuit (top view)
654
654
NQ
123
123
Start of commercial production
2008-10
1
2014-03-01