SSM6K211FE_14 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS3)

30
Common Source
10 ^{VDS = 3 V}
Ta = 25 °C
3
|Y_fs| – I_D
1
0.3
0.1
0.03
0.01
0.001
0.01
0.1
1
10
Drain current I_D (A)
1000
300
C – V_DS
Ciss
100
Coss
Crss
30
Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
0.1
1
10
100
Drain-source voltage V_DS (V)
SSM6K211FE
I_DR – V_DS
10
Common Source
VGS = 0 V _D
Ta = 25 °C
I_DR
1
G
S
0.1
0.01
0.001
0.0001
0
100 °C
25 °C
−25 °C
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Drain-source voltage V_DS (V)
1000
toff
100 ^tf
t – I_D
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
ton
10
tr
1
0.01
0.1
1
10
Drain current I_D (A)
Dynamic Input Characteristic
10
Common Source
ID = 3.2 A
8 ^{Ta = 25°C}
6
VDD=10 V
4
VDD=16 V
2
0
0
5
10
15
20
25
Total Gate Charge Qg (nC)
4
2014-03-01