SSM6K211FE_14 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS3)

I_D – V_DS
7
10 V 4.5 V 2.5 V 1.8 V
6
1.5 V
5
4
3
VGS = 1.2 V
2
1
Common Source
0
Ta = 25 °C
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage V_DS (V)
R_{DS (ON)} – V_GS
200
ID =2.0A
Common Source
SSM6K211FE
10
Common Source
VDS = 3 V
1
I_D – V_GS
0.1
0.01
0.001
Ta = 100 °C
25 °C
− 25 °C
0.0001
0
1.0
2.0
Gate-source voltage V_GS (V)
R_{DS (ON)} – I_D
200
Common Source
Ta = 25°C
100
25 °C
Ta = 100 °C
− 25 °C
0
0
2
4
6
8
Gate-source voltage V_GS (V)
100
0
0
1.5V
1.8 V
2.5 V
VGS = 4.5 V
2
4
6
Drain current I_D (A)
R_{DS (ON)} – Ta
120
Common Source
100
1.0 A / 1.8 V
0.5 A / 1.5 V
80
2.0 A / 2.5 V
60
40
20
0
−50
ID = 2.0 A / VGS = 4.5 V
0
50
100
150
Ambient temperature Ta (°C)
V_th – Ta
1.0
Common Source
VDS = 3 V
0.8
ID = 1 mA
0.6
0.4
0.2
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2014-03-01