SSM6K211FE_14 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS3)

SSM6K211FE
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2: Pulse test
Symbol
Test Condition
V _{(BR) DSS} I_D = 1 mA, V_GS = 0 V
V _{(BR) DSX} I_D = 1 mA, V_GS = –10 V
I_DSS
V_DS = 20 V, V_GS = 0 V
I_GSS
V_GS = ±10 V, V_DS = 0 V
V_th
V_DS = 3 V, I_D = 1 mA
⏐Y_fs⏐ V_DS = 3 V, I_D = 2.0 A
(Note 2)
I_D = 2.0 A, V_GS = 4.5 V
(Note 2)
I_D = 2.0 A, V_GS = 2.5 V
R_{DS (ON)}
I_D = 1.0 A, V_GS = 1.8 V
(Note 2)
(Note 2)
I_D = 0.5 A, V_GS = 1.5 V
(Note 2)
C_iss
C_oss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
C_rss
Q_g
Q_gs
V_DS = 10 V, I_D = 3.2 A, V_GS = 4.5 V
Q_gd
t_on
V_DD = 10 V, I_D = 1.0 A,
t_off
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
V_DSF I_D = –3.2 A, V_GS = 0 V
(Note 2)
Min Typ. Max
20
⎯
⎯
12
⎯
⎯
⎯
⎯
1
⎯
⎯
±1
0.35 ⎯
1.0
5.5 11.0 ⎯
⎯
36
47
⎯
44
59
⎯
55
82
⎯
66
118
⎯
510
⎯
⎯
98
⎯
⎯
85
⎯
⎯
10.8
⎯
⎯
8.6
⎯
⎯
2.2
⎯
⎯
16
⎯
⎯
40
⎯
⎯ –0.84 –1.2
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
Switching Time Test Circuit
(a) Test Circuit
2.5 V
IN
0
10 μs
OUT
V_DD = 10 V
R_G = 4.7 Ω
Duty ≤ 1%
V_IN: t_r, t_f < 5 ns
Common Source
Ta = 25°C
V_DD
Usage Considerations
(b) V_IN
2.5 V
0V
V_DD
(c) V_OUT
V_{DS (ON)}
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to below (1 mA for the
SSM6K211FE). Then, for normal switching operation, V_GS(on) must be higher than V_th, and V_GS(off) must be lower than
V_th. This relationship can be expressed as: V_GS(off) < V_th < V_GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2014-03-01