SSM6K208FE Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

10
Common Source
VDS = 3 V
Ta = 25°C
3
|Y_fs| – I_D
1
0.3
0.1
0.01
0.1
1
10
Drain current I_D (A)
1000
500
300
100
50
30
C – V_DS
Ciss
Coss
10
5 Common Source
3 ^{Ta = 25°C}
f = 1 MHz
VGS = 0 V
1
0.1
1
Crss
10
100
Drain–source voltage V_DS (V)
SSM6K208FE
I_DR – V_DS
10
1
0.1
0.01
0.001
0
25 °C
Ta =100 °C
Common Source
VGS = 0 V
D
G
I_DR
−25 °C
S
–0.5
–1.0
–1.5
Drain–source voltage V_DS (V)
1000
toff
100 ^tf
t – I_D
Common Source
VDD = 15 V
VGS = 0 ∼ 2.5 V
Ta = 25 °C
RG = 4.7 Ω
10
ton
tr
1
0.01
0.1
1
10
Drain current I_D (A)
Dynamic Input Characteristic
10
Common Source
ID = 1.9 A
8 _{Ta = 25°C}
6
VDD = 15 V
VDD = 24 V
4
2
0
0
1
2
3
4
5
Total Gate Charge Qg (nC)
5
2014-03-01