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| SSM6K208FE Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type | |||
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Switching Time Test Circuit
(a) Test Circuit
2.5 V
IN
0
10 μs
(b) VIN
OUT
VDD = 15 V
RG = 4.7 Ω
Duty ⤠1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
(c) VOUT
VDD
2.5 V
0V
VDD
VDS (ON)
Marking
Equivalent Circuit (top view)
SSM6K208FE
10%
90%
90%
10%
tr
tf
ton
toff
654
654
NV
123
123
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the
SSM6K208FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
3
2014-03-01
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