SSM6K208FE Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

4
10 V
4.0 V
3
I_D – V_DS
2.5 V Common Source
Ta = 25 °C
1.8 V
2
1.5 V
1
VGS = 1.2 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain–source voltage V_DS (V)
SSM6K208FE
10
Common Source
VDS = 3 V
1
I_D – V_GS
0.1
0.01
0.001
Ta = 100 °C
25 °C
− 25 °C
0.0001
0
1.0
2.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
400
ID =1.0A
Common Source
300
200
100
0
0
25 °C
Ta = 100 °C
− 25 °C
2
4
6
8
10
12
Gate–source voltage V_GS (V)
R_{DS (ON)} – I_D
400
Common Source
Ta = 25°C
300
200
1.8 V
2.5 V
100
VGS = 4.0V
0
0
1
2
3
4
Drain current I_D (A)
R_{DS (ON)} – Ta
400
Common Source
300
ID = 0.5 A / VGS = 1.8 V
200
0.8 A / 2.5 V
1.0 A / 4.0 V
100
0
−50
0
50
100
150
Ambient temperature Ta (°C)
V_th – Ta
1.0
Common Source
VDS = 3 V
ID = 1 mA
0.5
0
−50
0
50
100
150
Ambient temperature Ta (°C)
4
2014-03-01